Degradation and Bias-Stress Effect in TIPS-Pentacene Based Organic Thin Film Transistors with Polymer Dielectric
We have investigated the drain-source current (IDS) instability or drift due to continuous application of gate-source voltage (VGS) and drain-source voltage (VDS). For gate bias stress, both increasing and decreasing behavior of IDS has been observed and analyzed in terms of electron capture and emission respectively. A phenomenological model is used to explain the non-exponential decaying transients. Drain bias effect is small but noticeable in terms of 3% increase in IDS. Apart from bias-stress effect, the degradation of these devices is monitored by measuring the dark transfer characteristics at regular interval of time over a period of 1 month. The threshold voltage (VTh) changes are shown to be correlated with degradation in carrier mobility.
KeywordsOrganic thin film transistors TIPS-pentacene Bias-stress effect Interfacial traps
We thank Indo-German Science and Technology Council (IGSTC) and Department of Science & Technology (DST) New Delhi for financial support. We also thank National Centre for Flexible Electronics, IIT Kanpur, India, for providing all kind of support and facilities in carrying out experiments.