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Degradation and Bias-Stress Effect in TIPS-Pentacene Based Organic Thin Film Transistors with Polymer Dielectric

  • Subhash SinghEmail author
  • Y. N. Mohapatra
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

We have investigated the drain-source current (IDS) instability or drift due to continuous application of gate-source voltage (VGS) and drain-source voltage (VDS). For gate bias stress, both increasing and decreasing behavior of IDS has been observed and analyzed in terms of electron capture and emission respectively. A phenomenological model is used to explain the non-exponential decaying transients. Drain bias effect is small but noticeable in terms of 3% increase in IDS. Apart from bias-stress effect, the degradation of these devices is monitored by measuring the dark transfer characteristics at regular interval of time over a period of 1 month. The threshold voltage (VTh) changes are shown to be correlated with degradation in carrier mobility.

Keywords

Organic thin film transistors TIPS-pentacene Bias-stress effect Interfacial traps 

Notes

Acknowledgements

We thank Indo-German Science and Technology Council (IGSTC) and Department of Science & Technology (DST) New Delhi for financial support. We also thank National Centre for Flexible Electronics, IIT Kanpur, India, for providing all kind of support and facilities in carrying out experiments.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  1. 1.Materials Science ProgrammeIndian Institute of Technology KanpurKanpurIndia
  2. 2.National Centre for Flexible Electronics, Indian Institute of Technology KanpurKanpurIndia
  3. 3.Department of PhysicsIndian Institute of Technology KanpurKanpurIndia

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