Optically Controlled Silicon on Nothing MOSFET-Numerical Simulation
In this work, the sensitivity of Silicon On Nothing (SON) MOSFET has been investigated under the impact of light. The electrical parameters that we studied in this work are drain current, Ion/Ioff ratio, threshold voltage and On-state resistance (Ron). The variation in these parameters under the impact of wavelength of light (mainly varied in ultra violet range) and beam intensity has also been demonstrated. The dependency of the electrical parameters on the length of the device has also been are investigated. All the simulations are performed using ATLAS 3D device simulation under the ambient temperature condition.
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