Optically Controlled Silicon on Nothing MOSFET-Numerical Simulation

  • Vandana Kumari
  • Manoj SaxenaEmail author
  • Mridula Gupta
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)


In this work, the sensitivity of Silicon On Nothing (SON) MOSFET has been investigated under the impact of light. The electrical parameters that we studied in this work are drain current, Ion/Ioff ratio, threshold voltage and On-state resistance (Ron). The variation in these parameters under the impact of wavelength of light (mainly varied in ultra violet range) and beam intensity has also been demonstrated. The dependency of the electrical parameters on the length of the device has also been are investigated. All the simulations are performed using ATLAS 3D device simulation under the ambient temperature condition.


  1. 1.
    V. Kilchytska, T.M. Chung, B. Olbrechts, Y. Vovk, J.P. Raskin, D. Flandre, Electrical characterization of true silicon-on-nothing MOSFETs fabricated by Si layer transfer over a pre-etched cavity. Solid State Electron. 51(9), 1238–1244 (2007)ADSCrossRefGoogle Scholar
  2. 2.
    G. Eason, B. Noble, I.N. Sneddon, On certain integrals of Lipschitz-Hankel type involving products of Bessel functions. Phil. Trans. Roy. Soc. Lond. A247, 529–551 (1955)ADSMathSciNetCrossRefGoogle Scholar
  3. 3.
    Y. Nita, T. Yamagata, K. Shimomura, Gate-length dependence of optical characteristics in optically controlled MOSFET. Jpn. J. Appl. Phys. 38, 2580–2585 (1999)ADSCrossRefGoogle Scholar
  4. 4.
    S.M. Sze, Physics of semiconductor devices, 2nd edn. (Wiley, New York, 1981), p. 804Google Scholar
  5. 5.
    R. Wemer, C. Zimmermann, A. Kalz, Light dependence of partially depleted SOI -MOSFET’ s using SIMOX substrates. IEEE Trans. Electron Devices 42(9), 1653–1656 (1995)ADSCrossRefGoogle Scholar
  6. 6.
    E. Lee, D. Moon, J.H. Yang, K.S. Lim, Y.K. Choi, Transparent zinc oxide gate metal–oxide–semiconductor field-effect transistor for high responsivity photodetector. IEEE Electron Device Lett. 30(5), 493–495 (2009)ADSCrossRefGoogle Scholar
  7. 7.
    Y. Liu, K. Gopalafishan, P.B. Griffin, K. Ma, M.D. Deal, J.D. Plummer, MOSFETs and high-speed photodetectors on Ge on-insulator substrates fabricated using rapid melt growth, in IEDM (2004), pp. 1001–1004Google Scholar
  8. 8.
    ATLAS User’s Manual: 3-D Device Simulator, SILVACO International, Version 5.14.0Google Scholar
  9. 9.
    SOPRA Infobase,

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  1. 1.Department of Electronics ScienceUniversity of Delhi South CampusNew DelhiIndia
  2. 2.Department of ElectronicsDeen Dayal Upadhyaya College, University of DelhiNew DelhiIndia
  3. 3.Department of ElectronicsMaharaja Agrasen College, University of DelhiNew DelhiIndia

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