Scaling of Silicon PIN Waveguide Photodetector at 1550 nm Wavelength
Single-mode silicon p-i-n waveguides with varying cross-sections have been studied experimentally for on-chip photodetection at an operating wavelength λ ~ 1550 nm. It has been shown that the quantum efficiency increases with decreasing waveguide cross-section. The performance of such a photodetector can be modelled in terms of density of surface states, bulk two photon absorption co-efficient, and waveguide loss parameters.
KeywordsSilicon photonics Waveguide Surface states Two-photon absorption Photodetector
- 2.Y. Li et al., Characterization of surface-state absorption in foundry-fabricated silicon ridge waveguides at 1550 nm using photocurrents, in Conference on Lasers and Electro-Optics. Optical Society of America (2016), p. SM2G.4Google Scholar