MgZnO Based UV Heterojunction Photodetector Fabricated Using Dual Ion Beam Sputtering
This abstract reports the realization of p-type conduction in Sb (5 at.%): Mg0.10Zn0.90O (SMZO) grown in different growth ambient and then fabrication of SMZO/n-Si based UV heterojunction photodetector grown by dual ion beam sputtering (DIBS) system. The fabricated photodetectors were then probed for the effect of growth ambient using current–voltage (I–V) and photoresponse measurement on photodetector properties.
Authors are thankful to DIBS and PL facility, which are part of Sophisticated Instrument Centre (SIC) of IIT Indore. Ritesh Bhardwaj and Md. Arif Khan would like to thank DeitY, Ministry of Electronics and Information Technology, Government of India, for providing fellowship grant under Visvesvaraya PhD Scheme for Electronics and Information Technology. Prof Shaibal Mukherjee is thankful to DeitY, Ministry of Electronics and Information Technology, Government of India for the Young Faculty Research Fellowship (YFRF) under the Visvesvaraya PhD Scheme for Electronics and Information Technology. This work is also partially funded by DST, Government of India.