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Designing InP-Nanowire Based Vertical Metal-Oxide-Semiconductor Capacitors for Wavelength Selective Visible Light Sensing

  • Subhrajit Sikdar
  • Basudev Nag Chowdhury
  • Sanatan ChattopadhyayEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

The current work investigates photogeneration phenomena in InP-nanowire vertical metal-oxide-semiconductor (MOS) photo-capacitor by developing a theoretical model with second quantization description of photon absorption by a self-consistent simultaneous quantum-electrostatic solver. The equations are solved by using non-equilibrium Green’s function (NEGF) formalism. The vertical MOS device can directly detect the color of incident light in the range of 380–700 nm (visible region) with high spectral resolution by varying the nanowire diameter and applied voltage. The entire visible spectrum is detected with relatively higher device dimensions in comparison to the Si-nanowire based device. Such devices can be a potential candidate for wavelength selective direct photodetection with lesser fabrication complexities.

Notes

Acknowledgements

The authors would like to acknowledge the University Grant Commission (UGC), Government of India, for funding the fellowship of Mr. Subhrajit Sikdar through University of Calcutta. The authors would also like to acknowledge the Centre of Excellence (COE) for the Systems Biology and Biomedical Engineering, University of Calcutta, funded by the World Bank through TEQIP Phase II for proving the necessary infrastructural support.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Subhrajit Sikdar
    • 1
  • Basudev Nag Chowdhury
    • 2
  • Sanatan Chattopadhyay
    • 1
    Email author
  1. 1.Department of Electronic ScienceUniversity of CalcuttaKolkataIndia
  2. 2.Centre for Research in Nanoscience and Nanotechnology (CRNN)University of CalcuttaSalt Lake City, KolkataIndia

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