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AlGaN/GaN HEMT Based pH Sensor

  • N. Sharma
  • S. Dhakad
  • K. Singh
  • N. ChaturvediEmail author
  • A. Chauhan
  • C. Periasamy
  • N. Chaturvedi
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

The sensitivity of GaN HEMTs upon exposure of the gate area to phosphate buffer solution (PBS) has been explored. Output drain characteristic of the device reveals that the drain current decreases linearly with pH values. Higher pH contains less H+ concentration and which is tends to lower the drain current. A high sensitivity of 4.32 µA/mm-pH at Vds = +1 V is obtained.

Notes

Acknowledgements

The authors acknowledge the support of fabrication and characterization facilities at ODG, MEMS, and SNTG CSIR-CEERI Pilani, India.

References

  1. 1.
    M. Stutzmann, G. Steinhoff, M. Eickhoff, O. Ambacher, C.E. Nebel, J. Schalwig, R. Neuberger, G. Muller, GaN-based heterostructures for sensor applications. Diam. Relat. Mater. 11, 886–891 (2002)ADSCrossRefGoogle Scholar
  2. 2.
    D.E. Yates, S. Levine, T.W. Healy, Site-binding model of the electrical double layer at the oxide/ water interface. J. Chem. Soc. Farady Trans. I 70, 1807–1818 (1974)CrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • N. Sharma
    • 1
    • 2
  • S. Dhakad
    • 1
  • K. Singh
    • 1
  • N. Chaturvedi
    • 3
    Email author
  • A. Chauhan
    • 1
  • C. Periasamy
    • 2
  • N. Chaturvedi
    • 1
  1. 1.CSIR-Central Electronics Engineering Research InstitutePilaniIndia
  2. 2.Malaviya National Institute of Technology JaipurJaipurIndia
  3. 3.Birla Institute of Technology & Science PilaniPilaniIndia

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