Room Temperature Organophosphate Detection by Thermally Oxidized Metal Oxide Thin Films
This work mainly focuses on the growth and chemical sensing nature of CuO thin films for organophosphate pesticide detection. Cu films were first grown on p-type silicon substrate [(100), 1–10 Ω cm] using RF magnetron sputtering at 50 W power and 4 × 10−3 mbar pressure. Thermal oxidation of the films was carried out in air atmosphere at temperatures varying from 200 to 800 °C. The structural investigations were carried out by X-ray diffraction (XRD) technique. A mixed phase of CuO and Cu2O was observed for the oxidation temperature of 200 °C. The FESEM micrographs have shown a uniform granular surface pattern at the oxidation temperature of 600 °C without any appearance of cracks. In order to study the sensing behavior, current–voltage measurements were carried out in an isolated sensing chamber at room temperature. A considerable increase in current was observed for the oxidized films in presence of organophosphate pesticide.
This work was supported by the Department of Science and Technology (DST), India sponsored Indo-Korea project (INT/Korea/P-16/2013). This research was also supported by the International Research & Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (Grant number: 2012K1A3A1A19038371).
- 10.S. Choudhary, J.V.N. Sarma, S. Gangopadhyay, Growth and characterization of single phase Cu2O by thermal oxidation of thin copper films (2016)Google Scholar