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Silicon Etching Characteristics in Modified TMAH Solution

  • Veerla SwarnalathaEmail author
  • Avvaru Venkata Narasimha Rao
  • Prem Pal
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

In the present work, we have studied the etching characteristics of Si{100} and Si{110} in modified low concentration TMAH solution by adding different concentrations of NH2OH. The etch rate of silicon and thermal oxide, and etched surface morphology, which are important parameters to be known in the fabrication of MEMS structures using silicon wet bulk micromachining, have been studied in modified TMAH solution. In addition, the effect of aging time of the etchant solution on the etching characteristics is investigated.

Notes

Acknowledgements

This work was supported by the DST and the CSIR, New Delhi, India.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Veerla Swarnalatha
    • 1
    Email author
  • Avvaru Venkata Narasimha Rao
    • 1
  • Prem Pal
    • 1
  1. 1.MEMS and Micro/Nano Systems Laboratory, Department of PhysicsIndian Institute of Technology HyderabadKandi, SangareddyIndia

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