Design and Simulation of SOI-ISFET Macromodel Using SPICE

  • Mohit PadhyeEmail author
  • Soumendu Sinha
  • Rishi Sharma
  • Ravindra Mukhiya
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)


A behavioral macromodel of SOI-ISFET has been developed in HSPICE® to simulate the electrolyte-oxide-semiconductor structure of ISFET in a solution, with an additional membrane layer. The dual-gate effect of the SOI-ISFET has been simulated and enhanced sensitivity was obtained for different sensing films. The effect of gate oxide and buried oxide thicknesses on the dual-gate sensitivity has been studied and the obtained results are in accordance with the available literature.



The authors would like to acknowledge Director, CSIR-Central Electronics Engineering Research Institute for his valuable support. Mohit would like to give sincere thanks to Director, CSIR-CEERI, Pilani, for granting permission to work in the institute. The authors are very grateful to all the scientists and technical officers in Smart Sensors Area, CSIR-CEERI, Pilani, for their constant support and motivation.


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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Mohit Padhye
    • 1
    Email author
  • Soumendu Sinha
    • 2
    • 3
  • Rishi Sharma
    • 2
    • 3
  • Ravindra Mukhiya
    • 2
    • 3
  1. 1.Birla Institute of Technology and Science (BITS)PilaniIndia
  2. 2.CSIR-Central Electronics Engineering Research Institute (CEERI)PilaniIndia
  3. 3.Academy of Scientific and Innovative Research (AcSIR)ChennaiIndia

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