Design and Simulation of SOI-ISFET Macromodel Using SPICE
A behavioral macromodel of SOI-ISFET has been developed in HSPICE® to simulate the electrolyte-oxide-semiconductor structure of ISFET in a solution, with an additional membrane layer. The dual-gate effect of the SOI-ISFET has been simulated and enhanced sensitivity was obtained for different sensing films. The effect of gate oxide and buried oxide thicknesses on the dual-gate sensitivity has been studied and the obtained results are in accordance with the available literature.
The authors would like to acknowledge Director, CSIR-Central Electronics Engineering Research Institute for his valuable support. Mohit would like to give sincere thanks to Director, CSIR-CEERI, Pilani, for granting permission to work in the institute. The authors are very grateful to all the scientists and technical officers in Smart Sensors Area, CSIR-CEERI, Pilani, for their constant support and motivation.
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