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Investigation of Sensitivity of Gate Underlap Junctionless DG MOSFET for Biomolecules

  • Ajay
  • Rakhi Narang
  • Manoj Saxena
  • Mridula GuptaEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

In this letter, a simulation based investigation has been done to calculate the sensitivity of the gate underlap Junctionless (JL) Double Gate (DG) MOSFET for label free electrical detection of the biomolecules. The impact of biomolecules has been investigated of the various electrostatic characteristics of the JL DG MOSFET. The simulation has been carried out with the help of Sentaurus Device Simulator tool. The underlying Gate underlap JL DG MOSFET has been virtually fabricated by using Sprocess tool of Sentaurus.

Notes

Acknowledgements

Authors would like to thanks University of Delhi for providing the financial support.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Ajay
    • 1
  • Rakhi Narang
    • 2
  • Manoj Saxena
    • 3
  • Mridula Gupta
    • 4
    Email author
  1. 1.Advanced Nanoelectronics Computation LaboratoryIndian Institute of ScienceBengaluruIndia
  2. 2.Department of ElectronicsSri Venkateswara College, University of DelhiNew DelhiIndia
  3. 3.Department of ElectronicsDeen Dayal Upadhyaya College, University of DelhiNew DelhiIndia
  4. 4.Semiconductor Device Research Laboratory, Department of Electronic ScienceUniversity of DelhiNew DelhiIndia

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