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Analytical Model for Tapered Gate Electrode Double Gate MOSFET Incorporating Fringing Field Effects

  • Rakhi Narang
  • Gokulnath Rajendran
  • Mridula Gupta
  • Manoj SaxenaEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

The Analytical modeling of dual and tapered gate electrode double gate nMOSFET is presented. By changing the inclination angle of gate electrode, the impact of fringing field lines on the channel and thereby, the fringing capacitance is evaluated for various tapered gate electrode structures. Analytical solution is obtained for surface potential, threshold voltage and sub threshold drain current.

Notes

Acknowledgements

Authors would like to thank Council of Scientific & Industrial Research (CSIR), India (File No. 22(0724)/17/EMR-II).

Gokulnath Rajendran (ENGS3099) would like to thank the Indian Academy of Sciences for providing the opportunity to be a part of SRFP-2015.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Rakhi Narang
    • 1
  • Gokulnath Rajendran
    • 2
    • 3
  • Mridula Gupta
    • 4
  • Manoj Saxena
    • 5
    Email author
  1. 1.Department of Electronics Sri Venkateswara CollegeUniversity of DelhiNew DelhiIndia
  2. 2.School of Electrical and Electronic EngineeringNanyang Technological UniversitySingaporeSingapore
  3. 3.Technische Universität MünchenMunichGermany
  4. 4.Department of Electronic ScienceUniversity of Delhi South CampusNew DelhiIndia
  5. 5.Department of ElectronicsDeen Dayal Upadhyay College, University of DelhiNew DelhiIndia

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