Analytical Model for Tapered Gate Electrode Double Gate MOSFET Incorporating Fringing Field Effects
The Analytical modeling of dual and tapered gate electrode double gate nMOSFET is presented. By changing the inclination angle of gate electrode, the impact of fringing field lines on the channel and thereby, the fringing capacitance is evaluated for various tapered gate electrode structures. Analytical solution is obtained for surface potential, threshold voltage and sub threshold drain current.
Authors would like to thank Council of Scientific & Industrial Research (CSIR), India (File No. 22(0724)/17/EMR-II).
Gokulnath Rajendran (ENGS3099) would like to thank the Indian Academy of Sciences for providing the opportunity to be a part of SRFP-2015.
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