Self-heating in Inserted Oxide FINFETs
Thermal behavior of inserted oxide FinFET is studied and compared to that of conventional bulk and SOI FinFET. It is observed that thermal resistance and temperature rise in iFinFET with 3 nm thick inserted oxide is about 8% higher compared to conventional bulk FinFET. Effect of increasing inserted oxide thickness and thermal conductivity is further documented.
- 1.P. Zheng, D. Connelly, F. Ding, T.J.K. Liu, Inserted-oxide FinFET (iFinFET) design to extend CMOS scaling, in International Symposium on VLSI Technology, Systems, and Applications, Proceedings, vol. 2015, June 2015, pp. 9–10Google Scholar
- 2.E. Buturla, J. Johnson, S. Furkay, P. Cottrell, A new three-dimensional device simulation formulation, in NASECODE VI, pp. 291–296 (1981)Google Scholar
- 3.M. Shrivastava, M. Agrawal, S. Mahajan, H. Gossner, S. Member, T. Schulz, D.K. Sharma, S. Member, V.R. Rao, S. Member, Physical insight toward heat transport and an improved electrothermal modeling framework for FinFET architectures. IEEE Trans. Electron Devices 59(5), 1353–1363 (2012)ADSCrossRefGoogle Scholar
- 5.A. Bulusu, D.G. Walker, Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films, pp. 1–7 (2006)Google Scholar