Effect of Gate Dielectric Material on the Analog Performance of a Ge-Source Tunnel FET
In this paper, a detailed investigation of the effects of varying dielectric constant of the gate dielectric on the analog performance of a tunnel FET is reported. Variation in gate dielectric constant is made for both constant physical thickness and constant effective oxide thickness (EOT). A high-k gate dielectric is found to yield improved analog performance when physical thickness is kept constant, which is due to increased gate capacitance. On the other hand, a low-k gate dielectric delivers better analog performance when EOT is kept constant.
- 2.S.H. Kim, H. Kam, C. Hu, T.-J.K. Liu, Ge-source tunnel field effect transistors with record high ION/IOFF, in Symposium on VLSI Technology Digest of Technical Papers, pp. 178–179 (2009)Google Scholar
- 9.P.G.D. Agopian, M.D.V. Martino, S.D. dos Santos, F.S. Neves, J.A. Martino, R. Rooyackers, A. Vandooren, E. Simoen, A.V.-Y. Thean, C. Claeys, Influence of the source composition on the analog performance parameters of vertical nanowire-TFETs. IEEE Trans. Electron Devices 62, 16–22 (2015)ADSCrossRefGoogle Scholar
- 10.P.G.D. Agopian, S.D. dos Santos, F.S. Neves, J.A. Martino, A. Vandooren, R. Rooyackers, E. Simoen, C. Claeys, NW-TFET analog performance for different ge source compositions, in IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (2013)Google Scholar
- 11.ATLAS User’s Manual, https://www.silvaco.com
- 13.H. Möller, V. Schlichting, Polycrystalline Semiconductors (Springer, 1989)Google Scholar
- 14.O. Madelung, U. Rössler, V. Schlichting, Impurities and Defects in Group IV Elements, IV–IV and III–V Compounds. Part A: Group IV Elements (Springer, Berlin, Heidelberg, 2002)Google Scholar