Effect of Delta-p Doping and i-Region Length Scaling on Ion/Ioff in Si NIPIN Diode for Selector Application
Higher Ion/Ioff and a low off state leakage is desirable for a selector diode for memory applications. Punch through based triangular barrier bidirectional Si NIPIN selector possess high on-off current ratio (>1 × 104) with a low off state leakage current. An Ion/Ioff > 1 × 106 at 1 V with an Ioff of 76 nA at 0.5 V, for NIPIN, has been demonstrated here, by scaling the i-region length and delta-p doping by simulation results which are calibrated with experimental results.
The authors would like to thank Department of Science and Technology, Govt. of India for research funding. The research was performed at IITB-NF, IIT Bombay funded by MCIT, Govt. of India.
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