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Effect of Delta-p Doping and i-Region Length Scaling on Ion/Ioff in Si NIPIN Diode for Selector Application

  • Bhaskar DasEmail author
  • J. Schulze
  • Udayan Ganguly
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

Higher Ion/Ioff and a low off state leakage is desirable for a selector diode for memory applications. Punch through based triangular barrier bidirectional Si NIPIN selector possess high on-off current ratio (>1 × 104) with a low off state leakage current. An Ion/Ioff > 1 × 106 at 1 V with an Ioff of 76 nA at 0.5 V, for NIPIN, has been demonstrated here, by scaling the i-region length and delta-p doping by simulation results which are calibrated with experimental results.

Notes

Acknowledgements

The authors would like to thank Department of Science and Technology, Govt. of India for research funding. The research was performed at IITB-NF, IIT Bombay funded by MCIT, Govt. of India.

References

  1. 1.
    R. Meshram, B. Das, R. Mandapati, S. Lashkare, S. Deshmukh, S. Lodha, J. Schulze, U. Ganguly, High performance triangular barrier engineered NIPIN selector for bipolar RRAM, in International Memory Workshop (IMW) (2014)Google Scholar
  2. 2.
    B. Das, S. Sushama, J. Schulze, U. Ganguly, Sub-0.2 V impact ionization in Si NIPIN diode. IEEE Trans. Electron Device 63, 4668–4673 (2016)ADSCrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  1. 1.Indian Institute of Technology BombayPowai, MumbaiIndia

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