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A New In0.53Ga0.47As LDMOS with Tunneling Junction for Improved on State Performance

  • Navneet Kaur SainiEmail author
  • Raghvendra Sahai Saxena
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

A new In0.53Ga0.47As based laterally diffused power MOSFET (LDMOS) with the tunneling junction at the drain side has been proposed. The tunneling mechanism increases the drain current which results in reduced ON state resistance and increased peak transconductance significantly as compared with In0.53Ga0.47As LDMOS. Using 2-D numerical simulations, we demonstrate that the proposed device exhibits ~24% reduction in ON state resistance and ~16% improvement in peak transconductance as compared with In0.53Ga0.47As LDMOS without affecting the breakdown voltage.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  1. 1.Solid State Physics LaboratoryNew DelhiIndia

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