A New In0.53Ga0.47As LDMOS with Tunneling Junction for Improved on State Performance
A new In0.53Ga0.47As based laterally diffused power MOSFET (LDMOS) with the tunneling junction at the drain side has been proposed. The tunneling mechanism increases the drain current which results in reduced ON state resistance and increased peak transconductance significantly as compared with In0.53Ga0.47As LDMOS. Using 2-D numerical simulations, we demonstrate that the proposed device exhibits ~24% reduction in ON state resistance and ~16% improvement in peak transconductance as compared with In0.53Ga0.47As LDMOS without affecting the breakdown voltage.
- 2.T. Erlbacher, Lateral Power Transistors in Integrated Circuits (Springer, 2014)Google Scholar
- 3.J.A.D. Alamo, D. Antoniadis, A. Guo, D.-H. Kim, T.-W. Kim, J. Lin, W. Lu, A. Vardi, X. Zhao, InGaAs MOSFETs for CMOS: recent advances in process technology, in IEDM IEEE, pp. 13–24 (2013)Google Scholar