Simulation Study on Stability Aspect of Dual Metal Dual Dielectric Based TFET Architectures Against Temperature Variations
In this work simulation based investigation on stability aspect of Dual material Dual Dielectric based TFET configurations has been carried out. The device stability has been analyzed with variation in temperature using previously proposed architectures i.e. Dual Material Gate (DMG) TFET, Hetero-Dielectric (H-D) TFET and Dual Material Gate (DMG) Hetero-Dielectric (H-D) TFET. The simulation has been carried out using ATLAS device simulation software. For better clarity about the device sensitivity, circuit level analysis has been carried out using n-TFET inverter with resistive load. The time based study has been done where important figures of merit i.e. fall time delay and peak overshoot voltage and their dependence on operating temperature has been investigated.
Authors would like to thank Council of Scientific & Industrial Research (CSIR), India for providing necessary funding through the project (22(0724)/17/EMR-II) to pursue this research work.
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