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Sensing of Phase-Change Memory

  • Mohammad Nasim Imtiaz Khan
  • Alexander Jones
  • Rashmi Jha
  • Swaroop Ghosh
Chapter

Abstract

PCM is an emerging non-volatile memory that offers high integration density and high endurance. The speed of PCM is comparable to DRAM. However, PCM sense operation incurs issues due to the resistance drifting phenomenon, high sensing time, sense time variation from cell to cell, etc. Therefore, conventional sensing techniques need to be modified. In this chapter, we describe these issues along with the basics of PCM cell design and PCM read/write operation. We also summarized state-of-the-art PCM-specific sensing schemes proposed to address different PCM-sensing issues.

Keywords

Non-volatile memory PCM PCM read/write operation PCM sensing Read/write circuitry Multi-level cell sensing PCM-sensing challenges Resistance drifting Sensing time variation Sensing time 

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Copyright information

© Springer International Publishing AG, part of Springer Nature 2019

Authors and Affiliations

  • Mohammad Nasim Imtiaz Khan
    • 1
  • Alexander Jones
    • 2
  • Rashmi Jha
    • 2
  • Swaroop Ghosh
    • 1
  1. 1.Pennsylvania State UniversityState CollegeUSA
  2. 2.University of CincinnatiCincinnatiUSA

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