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Reliability of GaN-Based Power Devices

  • Gaudenzio Meneghesso
  • Enrico Zanoni
  • Matteo Meneghini
  • Maria Ruzzarin
  • Isabella Rossetto
Chapter
Part of the Integrated Circuits and Systems book series (ICIR)

Abstract

No new product is possible without reliability: this is especially true for new and emerging technology, such as gallium nitride-based devices. For GaN power transistors, breakdown mechanisms play a significant role. The reduction of the robustness and of the long-term reliability still represents a serious issue that must be taken into consideration. The first part of the chapter deals with the above mentioned aspects and mainly focuses on the permanent degradation induced in GaN-based devices by off-state time-dependent mechanisms.

Keywords

Gallium nitride Reliability Degradation Breakdown p-GaN Time to failure TDDB Failure modes Failure mechanisms Weibull 

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Copyright information

© Springer International Publishing AG, part of Springer Nature 2018

Authors and Affiliations

  • Gaudenzio Meneghesso
    • 1
  • Enrico Zanoni
    • 1
  • Matteo Meneghini
    • 1
  • Maria Ruzzarin
    • 1
  • Isabella Rossetto
    • 1
  1. 1.Department of Information EngineeringUniversity of Padova - DEI, PadovaPadovaItaly

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