An Analytical Model for AlGaN/GaN MOS-HEMT for High Power Applications
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We develop a physics based analytical model for AlGaN/GaN high electron mobility transistors (HEMT and MOS-HEMT) to study the I-V characteristics, current transfer characteristics, transconductance and drain-conductance. The model is modified from a model first presented by Chang and Fetterman for AlGaAs/GaAs HEMT (Chang and Fetterman in Solid-State Electron 30(5), 1987 , IEEE Trans Electron Dev Ed-34(I), 1987 ) The linear and non-linear drain currents have been separately calculated and merged them in order to evaluate the I-V characteristics. The threshold voltage has been evaluated from current transfer characteristics plot and verified from the transconductance parameter. We also consider the effect of polarization on threshold voltage of the devices. Moreover, to prove the exactness of our model, we compare our data with our experiment data for common HEMT, Hasan’s MOS-HEMT and Yoon’s HEMT with short channel.
This research was supported by Vietnam Ministry of Science and Technology and World Bank through Project “Fostering Innovation through Research, Science and Technology (FIRST), Grants No 01/FIRST/1.a/HUST. We gratefully acknowledge Prof. Chua Soo Jin (Department of Electrical and Computer Engineering, National University of Singapore) for the Project cooperation.
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