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An Analytical Model for AlGaN/GaN MOS-HEMT for High Power Applications

  • Nguyen-Trung Do
  • Nguyen-Hoang Thoan
  • Tran Minh Quang
  • Dao Anh Tuan
  • Nguyen-Ngoc TrungEmail author
Conference paper
  • 38 Downloads
Part of the Springer Proceedings in Materials book series (SPM, volume 6)

Abstract

We develop a physics based analytical model for AlGaN/GaN high electron mobility transistors (HEMT and MOS-HEMT) to study the I-V characteristics, current transfer characteristics, transconductance and drain-conductance. The model is modified from a model first presented by Chang and Fetterman for AlGaAs/GaAs HEMT (Chang and Fetterman in Solid-State Electron 30(5), 1987 [1], IEEE Trans Electron Dev Ed-34(I), 1987 [2]) The linear and non-linear drain currents have been separately calculated and merged them in order to evaluate the I-V characteristics. The threshold voltage has been evaluated from current transfer characteristics plot and verified from the transconductance parameter. We also consider the effect of polarization on threshold voltage of the devices. Moreover, to prove the exactness of our model, we compare our data with our experiment data for common HEMT, Hasan’s MOS-HEMT and Yoon’s HEMT with short channel.

Notes

Acknowledgements

This research was supported by Vietnam Ministry of Science and Technology and World Bank through Project “Fostering Innovation through Research, Science and Technology (FIRST), Grants No 01/FIRST/1.a/HUST. We gratefully acknowledge Prof. Chua Soo Jin (Department of Electrical and Computer Engineering, National University of Singapore) for the Project cooperation.

References

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    C.-S. Chang, H. I. Fetterman, Solid-State Electron. 30(5) (1987)Google Scholar
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    C.-S. Chang, H. I. Fetterman, IEEE Trans. Electron Dev. Ed-34(I) (1987)Google Scholar
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    E.A. Jones, F. Wang, D. Costinett, IEEE J. Emerg. Sel. Top. Power Electron. (JESTPE-2016-01-0036.R1).  https://doi.org/10.1109/jestpe.2016.2582685
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    S. Taking, AlN/GaN MOS-HEMTs Technology. A thesis submitted in fullfillment for the degree of Doctor of Philosophy (2012)Google Scholar
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    M.R. Hasan, A. Motayed, M.S. Fahad, M.V. Rao, J. Vac. Sci. Technol. B35, 052202 (2017)CrossRefGoogle Scholar
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    H.S. Yoon, B.-G. Min, J.M. Lee, D.M. Kang, H.K. Ahn, K.-J. Cho, J.-W. Do, M.J. Shin, H.-W. Jung, S.I. Kim, H.C. Kim, J.W. Lim, J. Korean Phys. Soc. 17(6), 360–364 (2017)CrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  • Nguyen-Trung Do
    • 1
  • Nguyen-Hoang Thoan
    • 1
  • Tran Minh Quang
    • 1
  • Dao Anh Tuan
    • 1
  • Nguyen-Ngoc Trung
    • 1
    Email author
  1. 1.School of Engineering PhysicsHanoi University of Science and TechnologyHanoiVietnam

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