Fabrication and Investigation of InSb Thin Films for IR SAW Photodetectors
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The two-stage pulsed laser deposition growth of thin InSb films on (111) Si and on LiNbO3 YX-128° substrates was studied using a thin InSb buffer layer deposited at a low temperature. This approach improves carrier mobility in InSb base layer, which largely determines the sensitivity of IR photodetectors at room temperature. The response speed in the near-IR range at λ = 985 nm was 1.92 ms, and the decay time was 1.67 ms, under xenon lamp radiation with mechanical modulation. The photosensitivity of the InSb/(111) Si film was about 1 A/W at 293 K. The response time of the sample was~6.8 μs, the time of complete recovery was ~34.5 μs, under laser diode radiation with a wavelength of 840 nm, power 1 mW.
This research work is supported by Russian Education and Science Ministry, the project No. 16.5405.2017/8.9.