Radiomeasuring Optical-Frequency Converters Based on Reactive Properties of Transistor Structures with Negative Differential Resistance

  • Oleksandr Osadchuk
  • Vladimir Osadchuk
  • Andriy SemenovEmail author
  • Iaroslav Osadchuk
  • Olena Semenova
  • Serhii Baraban
  • Maksym Prytula
Part of the Lecture Notes on Data Engineering and Communications Technologies book series (LNDECT, volume 48)


The paper presents the results of the investigation of the photoreactive effect in semiconductor diodes in the dynamic mode on the basis of the solution of the transport equation under the action of optical radiation, which gave the possibility to theoretically calculate the complete resistance of the base area and obtain an analytical dependence of its components on the power of optical radiation. The authors developed a model of an optical-frequency radiomeasuring converter of optical radiation, which describes the dependence of the complete resistance of the bipolar transistor structure that lies in the base of the converter of the optical radiation power. A photosensitive diode is used as a photosensitive element in a radiomeasuring optical-frequency converter. The proposed radiomeasuring optical-frequency converters have high sensitivity in the range of low optical radiation power values, which makes it possible to reliably measure even weak optical signals. The analytical expressions for transformation function and the sensitivity equation are obtained. The results of the simulation are confirmed by experimental studies, the error of the developed mathematical models is ±5%.


Photoreactive effect Reactive properties Negative differential resistance Radiomeasuring optic-frequency converter Optical radiation Full resistance 


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© The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2021

Authors and Affiliations

  1. 1.Vinnytsia National Technical UniversityVinnytsiaUkraine

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