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Schottky Diode Detectors with Low Leakage Current at High Operating Voltage

  • V. M. Sklyarchuk
  • V. A. GnatyukEmail author
  • V. G. Pylypko
  • T. Aoki
Conference paper
Part of the Lecture Notes in Networks and Systems book series (LNNS, volume 101)

Abstract

For the first time, Hg3In2Te6 (MIT) based Schottky diode photodetectors with the lowest reverse dark currents at high bias voltages were created. Both the Schottky rectifying and near Ohmic contacts were obtained by thermal vacuum deposition of Cr onto the MIT crystal surfaces pre-treated with Ar-ion bombardment at different regimes. The crystal surface morphology was monitored by AFM. Cr/MIT/Cr photodiodes were sensitive in the range of 0.6–1.8 μm and operated at increased bias voltage up to 300 V with low current density <150 and <20 μA/cm2 at 1 V at room temperature. I–V characteristics of the Cr/MIT/Cr diodes were investigated and showed high rectification ratio up to 103 at 1 V. A noticeable increase of the monochromatic current photosensitivity of Cr/MIT/Cr photodetectors was observed with increasing bias voltage and this parameter was weakly temperature dependent at voltages >10 V.

Keywords

Hg3In2Te6 crystals Schottky diode I–V characteristic Photosensitivity IR photodetector 

Notes

Acknowledgement

This research was partly supported by the following research projects: “Development of Cd(Zn)Te-based X/gamma-ray detectors with high resolution for security and diagnostics instruments” (The 2019 Cooperative Research at Research Center of Biomedical Engineering, Japan, grant number 2022), “Development of perovskite single crystal X/gamma-ray detectors for environmental radioactive contamination monitoring” (The Short-term Recruitment Program of Foreign Experts in Anhui (APFEP, 2019, China), “Exploring novel perovskite single-crystal based gamma-ray detector for trace environmental radioactivity monitoring” (Program of the Joint Ukraine—The People’s Republic of China R&D Projects for the period of 2019–2020 adopted by the Ministry of Science and Technology of the People’s Republic of China, grant number CU03-15).

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Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  1. 1.Yuriy Fedkovych Chernivtsi National UniversityChernivtsiUkraine
  2. 2.V.E. Lashkaryov Institute of Semiconductor PhysicsNational Academy of Sciences of UkraineKievUkraine
  3. 3.Research Institute of ElectronicsShizuoka UniversityHamamatsuJapan

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