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Characteristics of Failed Bypass Diodes for Photovoltaic Module by Artificial and Natural Lightning

  • Toshiyuki HamadaEmail author
  • Kenta Nakamoto
  • Ikuo Nanno
  • Norio Ishikura
  • Shinichiro Oke
  • Masayuki Fujii
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 598)

Abstract

In recent years, bypass diodes (BPDs) in photovoltaic (PV) modules have failed because of lightning-induced surges, and burnout of BPDs has also occurred. In this study, we investigate the characteristics of BPDs in PV modules, with the most likely cause of failure being lightning-induced surges; conduct an artificial lightning test of BPDs; and compare the failure characteristics with those BPDs that failed due to natural lightning. As a result, we confirmed that the schottky barrier diodes (SBDs) exposed to lightning-induced surges show short-mode failures where the fault resistance decreases inversely proportionally to the increase in the lightning surge amplitude. We also confirmed that the BPD in the PV module damaged by natural lightning fails in short mode or open mode. When the BPD fails in short mode, the circulating current generated in the bypass circuit increases the risk of heat generation and ignition.

Keywords

Lightning-induced surge Bypass diode Schottky-barrier diode Photovoltaic module Artificial lightning Natural lightning 

Notes

Acknowledgements

A part of this study was supported by the New Energy and Industrial Technology Development Organization (NEDO) and Power Academy. The author (One of the authors (T. Hamada)) was supported through the Electric Technology Research Foundation of Chugoku.

References

  1. 1.
    Takeya, K.: Photovoltaic System Case Study Guide; Lightning Protection and Design Method, Design Technology Series, pp. 94–99 (2015)Google Scholar
  2. 2.
    Haeberlin, H.: Interference voltages induced by magnetic fields of simulated lightning currents in photovoltaic modules and arrays. In: Proceedings of 17th EU-PVSEC, Munich, pp. 2343–2346 (2001)Google Scholar
  3. 3.
    Haeberlin, H.: Damages at bypass diodes by induced voltages and currents in PV modules caused by nearby lightning currents. In: Proceedings of 22th EU-PVSEC, Miran (2007)Google Scholar
  4. 4.
    Haeberlin, H., Kaempfer, M.: Measurement of damages at bypass diodes by induced voltages and currents in PV modules caused by nearby lightning currents with standard waveform. In: Proceedings of 23th EU-PVSEC, Valencia (2008)Google Scholar
  5. 5.
    Dhere, N.G., et al.: The reliability of bypass diodes in PV modules. In: Proceedings of SPIE Solar Energy + Technology, San Diego, CA (2013)Google Scholar
  6. 6.
    Jiang, T., Grzybowski, S.: Electrical degradation of photovoltaic modules caused by lightning induced voltage. In: Proceedings of IEEE EIC, Philadelphia, PA (2014)Google Scholar
  7. 7.
    Oke, S., et al.: Elucidation of overheating and firing processes of PV module which was damaged by induced lightning. In: Proceedings of JSES/JWEA Joint Conference, vol. 79, pp. 285–288 (2016)Google Scholar
  8. 8.
    Oke, S., Sakai, H., Tottori, H., Nanno, I., Hamada, T., Fujii, M., Ishikura, N.: Characteristics and risks of broken bypass diode with induced lightning. In: Proceedings of Grand Renewable Energy 2018 International Conference and Exhibition (GRE 2018), Yokohama, p. a91154 (2018)Google Scholar
  9. 9.
    Oke, S., et al.: I-V characteristics of broken bypas diode on PV module. In: Proceedings of 35th EU-PVSEC, Brussel, pp. 1996–2000 (2018)Google Scholar
  10. 10.
    Japanese Industrial Standards: Electromagnetic Compatibility (EMC) – Part 4–5: Testing and Measurement Techniques – Surge Immunity Test. Japanese Industrial Standards Committee (2011)Google Scholar
  11. 11.
    Ishikura, N., et al.: Simulation analysis of really occurred accident caused by short circuit failure of blocking diode and bypass circuit in the photovoltaics system. In: Proceedings of IEEE Conference, ICRERA 2018, Paris, pp. 533–536 (2018)Google Scholar

Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  • Toshiyuki Hamada
    • 1
    Email author
  • Kenta Nakamoto
    • 1
  • Ikuo Nanno
    • 1
  • Norio Ishikura
    • 2
  • Shinichiro Oke
    • 3
  • Masayuki Fujii
    • 4
  1. 1.National Institute of TechnologyUbe CollegeUbeJapan
  2. 2.National Institute of TechnologyYonago CollegeYonagoJapan
  3. 3.National Institute of TechnologyTsuyama CollegeTsuyamaJapan
  4. 4.National Institute of TechnologyOshima CollegeSuooshimaJapan

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