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Tight-Binding Model

  • Samuel J. MagorrianEmail author
Chapter
Part of the Springer Theses book series (Springer Theses)

Abstract

In this chapter, we present a description of the electronic and optical properties of mono- and few-layer InSe in the context of a tight-binding model. We find a marked change in the band gap on going from the bulk (band gap \(\sim \)1.3 eV) to the monolayer (band gap \(\sim \)2.8 eV) case, in agreement with experiment. We find that the principal interband optical transition is of a dominantly out-of-plane polarised character, with the oscillator strength increasing for thicker crystals, while the next-lowest energy transition couples strongly to in-plane polarised light, with an oscillator strength which is largely independent of the number of layers.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  1. 1.National Graphene InstituteUniversity of ManchesterManchesterUK

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