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Capacitances in P+N Silicon Pixel Sensors Using 3-D TCAD Simulation Approach

  • Ajay Kumar Srivastava
Chapter

Abstract

Science at the European XFEL (X-ray Free Electron Laser) requires precision p+n Si pixel detectors as a first choice which need to withstand a dose of up to 1 GGy of 12 keV X-ray (1016 γ/cm3/pixel) for 3 years operation. The sensors design is an important issue for the satisfactory performance at the XFEL and the noise in the readout electronics of the detector system is crucial parameters that should be minimized so for this we have proposed design of sensor pixel array with an optimum gap for the interpixel and backplane capacitance calculations using Synopsys TCAD commercial simulation program 2010.03. In this letter, we have compared the normalized 2-D and 3-D simulation results on p+n Si pixel detectors with analytical calculations and the observations are presented.

Notes

Acknowledgement

The author would like to thank the XFEL company for support and also would like to thank to the peoples involved in the development of AGPID for XFEL experiment from DESY (Deutsches Elektronen Synchrotron), PSI (Paul Scherer institute), Switzerland and University of Bonn, Germany for constant interest and support. This work was profited from the infrastructure grant of the Helmholtz Alliance “Physics at the Terascale”.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Ajay Kumar Srivastava
    • 1
  1. 1.Department of PhysicsChandigarh UniversityGharuan, MohaliIndia

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