Advertisement

Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments

  • Ajay Kumar Srivastava
Chapter

Abstract

Science at the European XFEL requires precision pixel detectors which need to withstand a dose of up to 1 GGy of 12 keV X-ray (1016 γ/cm3/pixel) for 3 years operation. The aim is to develop radiation hard p+n Si pixel sensor within the frame work of the AGIPD consortium. The two major design challenges are 1000 V operating voltage in order to avoid e-h plasma effect and reduced width of accumulation layer of free electrons in irradiated sensors and reduce dead edges up to 0.5 mm is needed for science requirements. In this paper, we summarised our efforts for the designing of the sensors and a report on the radiation hard sensor design idea for the surface damage detectors are proposed in order to reduce the effect of noise (interpixel capacitances) on ASIC electronics, and increase of charge collection efficiency.

Notes

Acknowledgement

The author would like to thank the XFEL company for support and also would like to thank to the peoples involved in the development of AGPID for XFEL experiment from DESY (Deutsches Elektronen Synchrotron), PSI (Paul Scherer institute), Switzerland and University of Bonn, Germany for constant interest and support. This work was profited from the infrastructure grant of the Helmholtz Alliance “Physics at the Terascale”.

References

  1. 1.
    The European X-Ray Laser Project XFEL. http://xfel.desy.de/Google Scholar
  2. 2.
    AGIPD (Adaptive Gain Integrating Pixel Detector). http://hasylab.desy.de/instrumentation/detectors/projects/agipd/Google Scholar
  3. 3.
    Synopsys Inc., TCAD software. http://www.synopsys.com/Tools/TCAD/DeviceSimulation/Google Scholar
  4. 4.
    Fretwurst, E., Januschek, F., Klanner, R., Perrey, H., Pintilie, I., Renn, F.: Study of the radiation hardness of silicon sensors for the XFEL, poster presented at the Nucl. Sci. Symposium IEEE, Dresden 2008, Germany, Conf. record N30–400Google Scholar
  5. 5.
    Becker, J., Eckstein, D., Klanner, R., Steinbrück, G., on behalf of the AGIPD Consortium: Impact of plasma effects on the performance of silicon sensors at an X-ray FEL. Nucl. Instr. Methods Phys. Res. A. 615(2), 230–236 (2010)ADSCrossRefGoogle Scholar
  6. 6.
    Richter, R.H., Andricek, L., Gebhart, T., Hauff, D., Kemmer, J., Lutz, G., Weiβ, R., Rolf, A.: Strip detector design for ATLAS and HERA-B using two-dimensional device simulation. Nucl. Instr. Methods Phys. Res. A. 377, 412–421 (1996)ADSCrossRefGoogle Scholar
  7. 7.
    http://hasylab.desy.de/instrumentation/detectors/projects/agipd/presentations/e97045/ASrivastavaDevelopmentofRadiationHardSiPixel.pdfGoogle Scholar
  8. 8.
    Ma, T.P.: Generation and transformation of interface traps in MOS structures. Microelectron. Eng. 22, 197–200 (1993)ADSCrossRefGoogle Scholar
  9. 9.
    Srivastava, A.K., et al.: Numerical modelling of Si sensors for HEP experiments and XFEL (POS RD09) 19 (2010)Google Scholar
  10. 10.
    Wunstorf, R.: Ph.D. thesis, University of Hamburg, DESY FHIK-92-01, October 1992Google Scholar
  11. 11.
    Longoni, A., Sampietro, M., Struder, L.: Instabilities of the behaviours of high resistivity Si detectors due to the presence of oxide charges. Nucl. Instr. Methods Phys. Res. A. 228(2), 35–43 (1990)ADSCrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Ajay Kumar Srivastava
    • 1
  1. 1.Department of PhysicsChandigarh UniversityGharuan, MohaliIndia

Personalised recommendations