Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments
Science at the European XFEL requires precision pixel detectors which need to withstand a dose of up to 1 GGy of 12 keV X-ray (1016 γ/cm3/pixel) for 3 years operation. The aim is to develop radiation hard p+n Si pixel sensor within the frame work of the AGIPD consortium. The two major design challenges are 1000 V operating voltage in order to avoid e-h plasma effect and reduced width of accumulation layer of free electrons in irradiated sensors and reduce dead edges up to 0.5 mm is needed for science requirements. In this paper, we summarised our efforts for the designing of the sensors and a report on the radiation hard sensor design idea for the surface damage detectors are proposed in order to reduce the effect of noise (interpixel capacitances) on ASIC electronics, and increase of charge collection efficiency.
The author would like to thank the XFEL company for support and also would like to thank to the peoples involved in the development of AGPID for XFEL experiment from DESY (Deutsches Elektronen Synchrotron), PSI (Paul Scherer institute), Switzerland and University of Bonn, Germany for constant interest and support. This work was profited from the infrastructure grant of the Helmholtz Alliance “Physics at the Terascale”.
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