Performance of MCz Si Material for p+n−n+ and n+p−p+ Si Sensor Design: Status and Development for HL-LHC
The LARGE HADRON COLLIDER (LHC) at CERN, Geneva is started in 2008 and successfully operating since last ten years. The LHC will be upgraded to HL-LHC in 2026 for the persistence of probing for the new physics at high-energy frontier and thus will reach higher integrated luminosity to 3000 fb−1 (up to 4000 fb−1) by the end of 2037. The bulk radiation damage degrades the electrical performance of the used Si sensors at HL-LHC radiation conditions therefore the Compact Muon Solenoid (CMS) experiments at LHC will require a new CMS tracking detectors for the phase 2 upgrade program at HL-LHC.
The radiation hardness of the Si sensors are challenging task at HL-LHC. In the framework of the CERN RD50 collaboration and Italian SMART project, several R & D has been made for the technological and radiation hard materials point of view for the Si sensors. Current research is on-going for the development of novel Si sensors design for the tracking area of the phase 2 upgrade of the CMS tracker detector (expected in 2026) for the HL-LHC.
It is recently reported that the Magnetic Czochralski (MCz) Si material is a prime candidate for SLHC (now HL-LHC) in the mixed irradiations. The appropriate Si sensors design for this materials after heavy irradiations are technological issue for the long-term performance of Si sensors in terms of less leakage current, high breakdown voltage, tolerable full depletion voltage, and low interstrip capacitance.
In this chapter, we review all of the fruitful results and recent development for MCz-Si material for the HL-LHC and proposed upgradation of Si sensor design for HL-LHC.
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