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Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation

  • Ajay Kumar Srivastava
Chapter

Abstract

Si detector is widely used in HEP experiments for e.g. in CMS experiment at LHC at CERN.

References

  1. 1.
    Schmitt, B., et al.: NIM-A. 501, 267 (2003)ADSCrossRefGoogle Scholar
  2. 2.
    Synopsys TCAD. URL: http://www.synopsys.com/
  3. 3.
    Hurkx, G.A.M., Klaassen, D.B.M., Knuvers, M.P.G.: A new recombination model for device simulation including tunneling. IEEE Trans. Electron Dev. 39(2), 331–338 (1992)ADSCrossRefGoogle Scholar
  4. 4.
    Poehlsen, T., Becker, J., Fretwurst, E., Klanner, R., Schwandt, J., Zhang, J.: Study of the accumulation layer and charge losses at the Si–SiO2 interface in pCn-silicon strip sensors. Nucl. Instr. Methods Phys. Res. A. 721, 26–34 (2013)ADSCrossRefGoogle Scholar
  5. 5.
    Richter, R., Andricek, L., Gebhart, T., Hauff, D., Kemmer, J., Lutz, G., Weiss, R., Rolf, A.: Strip detector design for ATLAS and HERA-B using two-dimensional device simulation. Nucl. Instr. Methods Phys. Res. A. 377(2), 412–421 (1996)ADSCrossRefGoogle Scholar
  6. 6.
    Chatterji, S., Bhardwaj, A., Ranjan, K., Namrata, Srivastava, A.K., Shivpuri, R.K.: Analysis of interstrip capacitance of Si microstrip detector using simulation approach. Solid State Electron. 47, 1491 (2003)ADSCrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Ajay Kumar Srivastava
    • 1
  1. 1.Department of PhysicsChandigarh UniversityGharuan, MohaliIndia

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