Basics and Theory
Abstract
Optical absorption is a fundamental process which is exploited when optical energy is converted into electrical energy. Optoelectronic receivers are based on this energy conversion process. Photodetectors convert optical energy into electrical energy. In this chapter, the most important factors needed for the comprehension of photodetectors will be summarized in a compact form. For a detailed description of the basics of optical absorption, the book [1] can be recommended. Here, emphasis will, of course, be placed on silicon devices. After the collection of the most important optical and optoelectronic definitions, we will summarize the fundamentals of device physics and modeling of solid-state electron devices including photodetectors in a compact form. A detailed review on modeling of solid-state electron devices can be found in [2]. Here, the semiconductor equations with implemented photogeneration and the models for carrier mobility used in device simulators will be listed first. Carrier drift and diffusion as well as their consequences for the speed and the quantum efficiency of photodetectors will be explained. Furthermore, the equivalent circuit of a photodiode will be discussed in order to show further aspects concerning the speed of photoreceivers. First, however, we will introduce photons and the properties of light. Photogeneration will be defined. Furthermore, optical reflection and its consequences on the efficiency of photodetectors will be described.
References
- 1.K.J. Ebeling, Integrated Optoelectronics (Springer, Berlin, 1993)CrossRefGoogle Scholar
- 2.S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer, Wien, 1984)CrossRefGoogle Scholar
- 3.E.D. Palik, Handbook of Optical Constants of Solids (Academic Press Inc, Orlando, 1985), pp. 547–569Google Scholar
- 4.D.E. Aspnes, A.A. Studna, Phys. Rev. B 27(2), 985–1009 (1983)ADSCrossRefGoogle Scholar
- 5.Technology Modeling Association Inc, Palo Alto, CA, MEDICI Manual (1994)Google Scholar
- 6.D.M. Caughey, R.E. Thomas, Carrier mobilities in silicon empirically related to doping and field. Proc. IEEE 55, 2192–2193 (1967)CrossRefGoogle Scholar
- 7.S. Selberherr, Process and device modeling for VLSI. Microelectron. Reliab. 24(2), 225–257 (1984)MathSciNetCrossRefGoogle Scholar
- 8.S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981)Google Scholar
- 9.J.M. Senior, Optical Fiber Communications (Prentice Hall, New York, 1992), p. 436Google Scholar
- 10.J. Muller, Photodiode for optical communication. Adv. Electron. Electron Phys. 55, 192–216 (1981)Google Scholar
- 11.S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 758Google Scholar
- 12.H. Zimmermann, Improved CMOS-integrated photodiodes and their application in OEICs, in IEEE International Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications (1997), pp. 346–351Google Scholar
- 13.R.N. Hall, Electron-hole recombination in germanium. Phys. Rev. 87, 387 (1952)ADSCrossRefGoogle Scholar
- 14.W. Shockley, W.T. Read, Statistics of the recombination of holes and electrons. Phys. Rev. 87, 835 (1952)ADSCrossRefGoogle Scholar
- 15.C.T. Sah, R.N. Noyce, W. Shockley, Carrier generation and recombination in p-n junction and p-n junction characteristics. Proc. IRE 45, 1228 (1957)CrossRefGoogle Scholar
- 16.D.M. Chapin, C.S. Fuller, G.L. Pearson, A new silicon p-n junction photocell for converting solar radiation into electrical power. J. Appl. Phys. 25, 676–677 (1954)ADSCrossRefGoogle Scholar
- 17.A. Goetzberger, J. Knobloch, B. Voss, Crystalline Silicon Solar Cells (Wiley, Chichester, 1998)Google Scholar
- 18.J.A. Mazer, Solar Cells: An Introduction to Crystalline Photovoltaic Technology (Kluwer Academic Publishers, Boston, 1997)Google Scholar
- 19.L. Partain, Solar Cells and Their Applications (Wiley, New York, 1995)Google Scholar
- 20.H.J. Möller, Semiconductors for Solar Cells (Artech House, Boston, 1993)Google Scholar
- 21.P.A.H. Hart, Bipolar transistors and integrated circuits, in Handbook on Semiconductors, vol. 4 (Device Physics), ed. by C. Hilsum (North-Holland, Amsterdam, 1993), pp. 99–264Google Scholar
- 22.J.M. Senior, Optical Fiber Communications (Prentice Hall, New York, 1992), p. 437Google Scholar
- 23.G. Winstel, C. Weyrich, Optoelektronik II (Springer, Berlin, 1986), p. 76CrossRefGoogle Scholar
- 24.A. Ghazi, Entwurf und Realisierung von integrierten Photodetektoren und CMOS-Schaltkreisen für optische Speichersysteme (Wissenschaftsverlag Mainz, Aachen, 2000)Google Scholar