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Analytical Investigation of Subthreshold Performance of SOI MESFET Devices

  • Iraj Sadegh Amiri
  • Hossein Mohammadi
  • Mahdiar Hosseinghadiry
Chapter

Abstract

This chapter accumulates all the obtained results derived from the analytical models in Chaps. 3–5. These results take into account the various device parameters like dimensions of the channel, doping concentration, buried oxide thickness, and applied biases. For all three devices, the profile of surface potential and threshold voltage are plotted and discussed. The characteristics and excellence of the devices under study are investigated and compared with the conventional SOI MESFET. Also, the improvement in short-channel behavior of the presented devices is shown. Lastly, the TCAD simulation for each device is accomplished. The accuracy of the presented analytical models is verified by comparison with the numerical simulation results obtained by device simulator ATLAS from Silvaco.

Keywords

Analytical models Doping concentration Buried oxide thickness TCAD simulation 

References

  1. 1.
    S.K. Saha, Technology Computer Aided Design, CRC Press, 17–60 (2016)Google Scholar
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    N. Fasarakis, A. Tsormpatzoglou, D.H. Tassis, C.A. Dimitriadis, K. Papathanasiou, J. Jomaah, G. Ghibaudo, Analytical unified threshold voltage model of short-channel FinFETs and implementation. Solid State Electron. 64, 34–41 (2011)CrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Iraj Sadegh Amiri
    • 1
    • 2
  • Hossein Mohammadi
    • 3
  • Mahdiar Hosseinghadiry
    • 4
  1. 1.Computational Optics Research Group, Advanced Institute of Materials ScienceTon Duc Thang UniversityHo Chi Minh CityVietnam
  2. 2.Faculty of Applied SciencesTon Duc Thang UniversityHo Chi Minh CityVietnam
  3. 3.Pasargad Higher Education InstituteShirazIran
  4. 4.Allseas EngineeringDELFTThe Netherlands

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