Three-Dimensional Analytical Model of the Non-Classical Three-Gate SOI MESFET

  • Iraj Sadegh Amiri
  • Hossein Mohammadi
  • Mahdiar Hosseinghadiry


In this chapter, the non-classical “Three-gate SOI MESFET” is introduced and investigated by developing a three-dimensional analytical model for surface potential and threshold voltage. The model is derived by solving the 3-D Poisson’s equation in the channel of the device using appropriate boundary conditions.


SOI MESFET Three-dimensional analytical model 3-D Poisson’s equation 


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© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Iraj Sadegh Amiri
    • 1
    • 2
  • Hossein Mohammadi
    • 3
  • Mahdiar Hosseinghadiry
    • 4
  1. 1.Computational Optics Research Group, Advanced Institute of Materials ScienceTon Duc Thang UniversityHo Chi Minh CityVietnam
  2. 2.Faculty of Applied SciencesTon Duc Thang UniversityHo Chi Minh CityVietnam
  3. 3.Pasargad Higher Education InstituteShirazIran
  4. 4.Allseas EngineeringDELFTThe Netherlands

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