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Three-Dimensional Analytical Model of the Non-Classical Three-Gate SOI MESFET

  • Iraj Sadegh Amiri
  • Hossein Mohammadi
  • Mahdiar Hosseinghadiry
Chapter

Abstract

In this chapter, the non-classical “Three-gate SOI MESFET” is introduced and investigated by developing a three-dimensional analytical model for surface potential and threshold voltage. The model is derived by solving the 3-D Poisson’s equation in the channel of the device using appropriate boundary conditions.

Keywords

SOI MESFET Three-dimensional analytical model 3-D Poisson’s equation 

References

  1. 1.
    H. Mohammadi, H. Abdullah, C.F. Dee, A review on modeling the channel potential in multi-gate MOSFETs. Sains Malays. 43, 861–866 (2014)Google Scholar
  2. 2.
    I. Ferain, C.A. Colinge, J.-P. Colinge, Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors. Nature 479, 310–316 (2011)CrossRefGoogle Scholar
  3. 3.
    J.P. Colinge, Multigate Transistors: Pushing Moore’s Law to the Limit, in 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2014, pp. 313–316Google Scholar
  4. 4.
    P. Vimala, N.B. Balamurugan, New analytical model for nanoscale tri-gate SOI MOSFETs including quantum effects. IEEE J. Electron Device Soc. 2, 1–7 (2014)CrossRefGoogle Scholar
  5. 5.
    N. Ida, Engineering Electromagnetics (Springer, Cham, 2000)CrossRefGoogle Scholar
  6. 6.
    P. Rakesh Kumar, S. Mahapatra, Analytical modeling of quantum threshold voltage for triple gate MOSFET. Solid State Electron. 54, 1586–1591 (2010)CrossRefGoogle Scholar
  7. 7.
    G. Katti, N. DasGupta, A. DasGupta, Threshold voltage model for mesa-isolated small geometry fully depleted SOI MOSFETs based on analytical solution of 3-D Poisson’s equation. IEEE Trans. Electron Devices 51, 1169–1177 (2004)CrossRefGoogle Scholar
  8. 8.
    S. Tripathi, V. Narendar, A three-dimensional (3D) analytical model for subthreshold characteristics of uniformly doped FinFET. Superlattice. Microst. 83, 476–487 (2015)CrossRefGoogle Scholar
  9. 9.
    D.S. Havaldar, G. Katti, N. DasGupta, A. DasGupta, Subthreshold current model of FinFETs based on analytical solution of 3-D Poisson’s equation. IEEE Trans. Electron Devices 53, 737–742 (2006)CrossRefGoogle Scholar
  10. 10.
    Y. Ping Chin, J.G. Fossum, Physical subthreshold MOSFET modeling applied to viable design of deep-submicrometer fully depleted SOI low-voltage CMOS technology. IEEE Trans. Electron Devices 42, 1605–1613 (1995)CrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Iraj Sadegh Amiri
    • 1
    • 2
  • Hossein Mohammadi
    • 3
  • Mahdiar Hosseinghadiry
    • 4
  1. 1.Computational Optics Research Group, Advanced Institute of Materials ScienceTon Duc Thang UniversityHo Chi Minh CityVietnam
  2. 2.Faculty of Applied SciencesTon Duc Thang UniversityHo Chi Minh CityVietnam
  3. 3.Pasargad Higher Education InstituteShirazIran
  4. 4.Allseas EngineeringDELFTThe Netherlands

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