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Design and Modeling of Triple-Material Gate SOI MESFET

  • Iraj Sadegh Amiri
  • Hossein Mohammadi
  • Mahdiar Hosseinghadiry
Chapter

Abstract

In this chapter, a new non-classical MESFET design “triple-material gate SOI MESFET” is introduced and expected to exhibit better short-channel performance. Two-dimensional analytical model of the device is derived to describe the performance of the device including surface potential, threshold voltage, and subthreshold swing.

Keywords

Non-classical MESFET Triple-material gate SOI MESFET Channel performance 

References

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Iraj Sadegh Amiri
    • 1
    • 2
  • Hossein Mohammadi
    • 3
  • Mahdiar Hosseinghadiry
    • 4
  1. 1.Computational Optics Research Group, Advanced Institute of Materials ScienceTon Duc Thang UniversityHo Chi Minh CityVietnam
  2. 2.Faculty of Applied SciencesTon Duc Thang UniversityHo Chi Minh CityVietnam
  3. 3.Pasargad Higher Education InstituteShirazIran
  4. 4.Allseas EngineeringDELFTThe Netherlands

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