Design and Modeling of Triple-Material Gate SOI MESFET
In this chapter, a new non-classical MESFET design “triple-material gate SOI MESFET” is introduced and expected to exhibit better short-channel performance. Two-dimensional analytical model of the device is derived to describe the performance of the device including surface potential, threshold voltage, and subthreshold swing.
KeywordsNon-classical MESFET Triple-material gate SOI MESFET Channel performance
- 1.A. Chaudhry, Analytical Modeling and Simulation of Short-Channel Effects in a Fully Depleted Dual-Material Gate (DMG) SOI MOSFET (Indian Institute of Technology Delhi, Delhi, 2003)Google Scholar
- 3.K. Goel, M. Saxena, M. Gupta, R. Gupta, Comparison of three region multiple gate nanoscale structures for reduced short channel effects and high device reliability. NSIT Nanotechnol. 3, 816–819 (2006)Google Scholar