General Overview of the Basic Structure and Operation of a Typical Silicon on Insulator Metal–Semiconductor Field Effect Transistor (SOI-MESFET)

  • Iraj Sadegh Amiri
  • Hossein Mohammadi
  • Mahdiar Hosseinghadiry


This chapter states the physics and fundamental concepts related to different types of field effect transistors. The necessities and various strategies related to scaling are explained. A detailed description of the origin and impact of various short-channel effects associated with downscaling and their influence on the normal operation of MOS transistors are described. The different technical solutions presented to resolve the problems caused by short-channel effects are discussed. Finally, the structures and advantages of non-classical devices and their feasibility in the settling of the short-channel effects are described.


Physics and fundamental concepts Field effect transistors MOS transistors 


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© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Iraj Sadegh Amiri
    • 1
    • 2
  • Hossein Mohammadi
    • 3
  • Mahdiar Hosseinghadiry
    • 4
  1. 1.Computational Optics Research Group, Advanced Institute of Materials ScienceTon Duc Thang UniversityHo Chi Minh CityVietnam
  2. 2.Faculty of Applied SciencesTon Duc Thang UniversityHo Chi Minh CityVietnam
  3. 3.Pasargad Higher Education InstituteShirazIran
  4. 4.Allseas EngineeringDELFTThe Netherlands

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