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Grain Boundary Effects in Relation to the Dielectric Properties of Infrared Transmitting Materials

  • T. J. Gray
  • D. Guile
Conference paper
Part of the Materials Science Research book series (MSR)

Abstract

Dielectric and infrared transmitting properties of single-crystal and hot-pressed polycrystalline specimens of MgO, MgF2, and other infrared transmitting materials have been investigated. The frequency dispersion of the dielectric loss has been determined from 100 cps to 100 kcps for the temperature range 25–550°C. DC conductivity has also been determined. Initial attempts to separate the grain boundary contribution from that of the bulk by a Sillars-Koops-type analysis were not entirely satisfactory. An alternate qualitative analysis is proposed. The apparent activation energy for the dielectric-loss mechanism has been determined.

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References

  1. 1.
    R.W. Sillars, J. Inst. Elec. Engrs. (London) 80: 378 (1937).Google Scholar
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    C.G. Koops, Phys. Rev. 83: 121 (1951).CrossRefGoogle Scholar
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    T. J. Gray and J.K. Zope, “Infrared Transmitting Materials,” presented at the San Francisco Meeting of the American Ceramic Society, October 1964.Google Scholar
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    T. J. Gray, Defect Solid State, Interscience Publishers, Inc., (New York), 1957.zbMATHGoogle Scholar
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    N. Tallan, Ph.D. Thesis, State University of New York College of Ceramics, Alfred University, Alfred, New York, 1959.Google Scholar
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    J. Volger, Progress in Semiconductors, Vol. 4, John Wiley and Sons, (New York), 1960.Google Scholar

Copyright information

© Springer Science+Business Media New York 1966

Authors and Affiliations

  • T. J. Gray
    • 1
  • D. Guile
    • 1
  1. 1.State University of New York College of CeramicsAlfred UniversityAlfredUSA

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