Grain Boundary Effects in Relation to the Dielectric Properties of Infrared Transmitting Materials
Dielectric and infrared transmitting properties of single-crystal and hot-pressed polycrystalline specimens of MgO, MgF2, and other infrared transmitting materials have been investigated. The frequency dispersion of the dielectric loss has been determined from 100 cps to 100 kcps for the temperature range 25–550°C. DC conductivity has also been determined. Initial attempts to separate the grain boundary contribution from that of the bulk by a Sillars-Koops-type analysis were not entirely satisfactory. An alternate qualitative analysis is proposed. The apparent activation energy for the dielectric-loss mechanism has been determined.
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- 1.R.W. Sillars, J. Inst. Elec. Engrs. (London) 80: 378 (1937).Google Scholar
- 3.T. J. Gray and J.K. Zope, “Infrared Transmitting Materials,” presented at the San Francisco Meeting of the American Ceramic Society, October 1964.Google Scholar
- 5.N. Tallan, Ph.D. Thesis, State University of New York College of Ceramics, Alfred University, Alfred, New York, 1959.Google Scholar
- 6.J. Volger, Progress in Semiconductors, Vol. 4, John Wiley and Sons, (New York), 1960.Google Scholar