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IMPATT Gunn diodes

  • P. A. Roland
  • A. Bert
Chapter
Part of the Microwave Technology Series book series (MRFT)

Abstract

IMPATT and Gunn diodes are quite different, since in IMPATT diodes the free carriers are generated within the active zone by impact ionization, while in Gunn diodes the mobile carriers are injected through the cathode contact. However, both of these devices rely on the carrier transit time in order to provide a negative terminal resistance which renders possible power generation or power amplification in the microwave spectrum, and as a consequence are more and more widely used in microwave generation.

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Copyright information

© Bradford L. Smith and Michel-Henri Carpentier 1993

Authors and Affiliations

  • P. A. Roland
  • A. Bert

There are no affiliations available

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