Interface Improvement by Hot Carrier Degradation — Forming Gas Annealing Cycle
We study Si-SiO2 interfaces with surface channel carriers subjected to strong, lateral rf fields (Er f ∈104 V/cm; f≈3GHZ) at 4.2K. Interface degradation is found to be caused by hot holes in a two step process. Positive charge appears in the oxide at 4.2K and is subsequently converted to interface traps by warming up to 300K. When the severely degraded sample is now subjected to a 400°C forming gas anneal cycle, substantial improvement over the original predegradation quality results. The effect has been examined for various types of oxides on n- and p-type samples.
KeywordsInterface Trap Hole Conductivity Degraded Sample Interface Trap Density Positive Oxide Charge
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