Interface Improvement by Hot Carrier Degradation — Forming Gas Annealing Cycle

  • Q. Y. Ye
  • A. Zrenner
  • F. Koch

Abstract

We study Si-SiO2 interfaces with surface channel carriers subjected to strong, lateral rf fields (Er f ∈104 V/cm; f≈3GHZ) at 4.2K. Interface degradation is found to be caused by hot holes in a two step process. Positive charge appears in the oxide at 4.2K and is subsequently converted to interface traps by warming up to 300K. When the severely degraded sample is now subjected to a 400°C forming gas anneal cycle, substantial improvement over the original predegradation quality results. The effect has been examined for various types of oxides on n- and p-type samples.

Keywords

Interface Trap Hole Conductivity Degraded Sample Interface Trap Density Positive Oxide Charge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    Ye Qiu-Yi, A. Zrenner, and F. Koch, Appl. Phys. Lett. 52, 561 (1987).CrossRefGoogle Scholar
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    V.Dolgopolov, C. Mazure, A. Zrenner, and F. Koch, J. Appl. Phys. 55, 4280 (1984).Google Scholar
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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • Q. Y. Ye
    • 1
  • A. Zrenner
    • 1
  • F. Koch
    • 1
  1. 1.Physik-DepartmentTechnische Universität MünchenGarchingGermany

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