The Influence of the Si-Substrate Characteristics on the Quality of Poly-Si and Al Gated Mos Oxides

  • C. Hasenack
  • M. Heyns
  • R. Falster
  • R. De Keersmaecker

Abstract

The dielectric strength and the Si/S1O2 interface state density were determined for thermally grown silicon dioxide layers grown on various Si-substrates (FZ, CZ with varying oxygen content and EPI material). A clear dependence of the high-field breakdown characteristics on the starting oxygen content of the Si-substrate was established. The effects of cleaning, pre-oxidation heat treatment and gate electrode material were also investigated.

Keywords

Si02 Layer Dielectric Strength Breakdown Field Interface State Density Gate Area 
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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • C. Hasenack
    • 1
  • M. Heyns
    • 1
  • R. Falster
    • 2
  • R. De Keersmaecker
    • 1
  1. 1.Interuniversity Microelectronics Center (IMEC vzw)LeuvenBelgium
  2. 2.Monsanto Electronic Materials CompanyMilton Keynes, BuckinghamshireUK

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