Studies of Anhydrous HF Preoxidation Treatment of Silicon Surfaces

  • G. T. Duranko
  • D. J. Syverson
  • L. A. Zazzera
  • J. Ruzyllo
  • D. C. Frystak

Abstract

The effect of application of anhydrous HF gas to chemically cleaned silicon surfaces prior to thermal oxidation was examined. A comparison to a dilute hydrofluoric acid dip-rinse shows that the anhydrous HF preoxidation treatment leaves the silicon surface fluorinated but with slightly less carbon contamination and lower particulate contamination. SIMS and ESCA measurements have shown that in the course of subsequent thermal oxidation, fluorine undergoes redistribution in the oxide. Performance of gate oxides in terms of oxide breakdown statistics and interface charge density were studied using MOS capacitors.

Keywords

Thermal Oxide Silicon Surface Gate Oxide Interface State Density Hydrofluoric Acid Solution 
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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • G. T. Duranko
    • 1
  • D. J. Syverson
    • 1
  • L. A. Zazzera
    • 1
  • J. Ruzyllo
    • 2
  • D. C. Frystak
    • 2
  1. 1.FSI InternationalChaskaUSA
  2. 2.CEMD, Dept. of Electrical EngineeringPenn State UniversityUSA

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