Defects and Impurities in SiO2 Interface for Oxides Prepared Using Superclean Methods
A superclean oxidation technology characterized by hydrogen and nitrogen contamination-free oxidation has been developed. It was experimentally demonstrated that an Si-SiO2 interface with a high energy barrier height of 3.5 eV for electron emission from Si into SiO2 could be realized. X-ray photoelectron spectroscopy analysis revealed that the valence-band discontinuity of the SiSiO2 interface is 4.5 eV which is smaller than that of the conventional oxide. These results suggest that the direct tunneling and Fowler-Nordheim tunneling current densities through the oxide can be controlled by interface doping for requirements of each target device oxide such as gate oxide, DRAM storage capacitor oxide, E2 PROM oxide, etc.
KeywordsGate Oxide Breakdown Strength Direct Tunneling Interface Trap Density Average Electric Field
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