The Si-SiO2 Interface Roughness: Causes and Effects

  • P. O. Hahn
  • M. Grundner
  • A. Schnegg
  • H. Jacob

Abstract

The structural properties of silicon surfaces and interfaces have been studied from a macroscopic to an atomic scale by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), and optical methods (lightscattering, magic mirror). The chemical state of silicon surfaces prepared by different cleaning procedures which influences the roughening was analyzed using x-ray photoelectron (XPS) and high resolution electron energy loss spectroscopy (HREELS) measurements.

It is shown that thermal oxidation of silicon, in the course of device production, leads to a pronounced roughness at the Si-SiO2 interface. This in-terface roughness depends on the virgin silicon surface morphology and its chemical state, on bulk properties, and on the parameters of oxidation.

The influence of the interfacial structure in MOS inversion layers on electronic properties like mobility, interface states, fixed oxide charges, and on the dielectric breakdown behaviour will be demonstrated.

Keywords

Root Mean Square Oxide Thickness Interface Roughness Submicron Range Polished Wafer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Springer Series in Electrophysics 7, edited by M. Schulz and G. Pensl ( Springer, Berlin, 1981 )Google Scholar
  2. 2.
    S.T. Pantelides (ed.): “The Physics and Chemistry of Si02 and Its Interfaces”, ( Pergamon, New York 1980 )Google Scholar
  3. 3.
    Proceedings of the International Conferences on Insulating Films on Semiconductors INFOS (1987 Leuven, 1985 Toulouse, 1983 Eindhoven) North-Holland, AmsterdamGoogle Scholar
  4. 4.
    T. Ando, A.B. Fowler, and F. Stern, Rev. Mod. Phys., 54, 437 (1982)CrossRefGoogle Scholar
  5. 5.
    A. Qurmazd, in “Si02 and Its Interfaces” ed. by G. Lucovsky and S. Pantelides (Mater. Res. Soc. Proc. to be published, Boston 1987 )Google Scholar
  6. 6.
    K. Kugimiya, J. Electrochem. Soc., 130, 2123 (1983)CrossRefGoogle Scholar
  7. 7.
    P.O. Hahn, I. Lampert, and A. Schnegg, in “Si02 and Its Interfaces” ed. by G. Lucovsky and S.T. Pantelides (Mater. Res. Soc. Proc. to be published, Boston 1987 )Google Scholar
  8. 8.
    L. Mattsson, in “Thin Film Technologies”, SPIE Proceedings, 652, Innsbruck (1986); (ASTM standard: F 1048 )Google Scholar
  9. 9.
    M. Henzler, in “Advances in Solid State Physics”, 27, 185, ed. by P. Grosse, Vieweg, Braunschweig (1987)CrossRefGoogle Scholar
  10. 10.
    P.O. Hahn, in “Thin Films - Interfaces and Phenomena ed. by R.J. Nemanich and P.S. Ho (Mater. Res. Soc. Proc., 54, 645 (1986)Google Scholar
  11. 11.
    E. Hartmann, F. Koch, P.O. Hahn, and J. Behm, Journ. of Appl. Phys., to be publishedGoogle Scholar
  12. 12.
    M. Grundner and H. Jacob, Appl. Phys. A, 39, 73 (1986)CrossRefGoogle Scholar
  13. 13.
    M. Grundner and R. Schulz, Proc. of the Topical Conf. “Deposition and Growth: Limits for Microelectronics” ed. by G.W. Rubloff, ( AVS Meeting, Anaheim, 1987 )Google Scholar
  14. 14.
    M. Grundner, J. Vac. Sci. Technol. A, 5, 2011 (1987)Google Scholar
  15. 15.
    P.O. Hahn and M. Henzler, J. Appl. Phys., 52, 4122 (1981) and J. Vac. Sci. Technol. A, 2, 574 (1984)CrossRefGoogle Scholar
  16. 16.
    P.O. Hahn and M. Henzler, J. Appl. Phys., 54, 6492 (1983)CrossRefGoogle Scholar
  17. 17.
    P.O. Hahn, S. Yokoyama, and M. Henzler, Surf. Sci., 142, 545 (1984)CrossRefGoogle Scholar
  18. 18.
    G. Pietsch and M. Henzler to be publishedGoogle Scholar
  19. 19.
    F. Le Goues private communicationGoogle Scholar
  20. 20.
    R.M. Feenstra and G.S. Oehrlein, Appl. Phys. Lett., 47, 97 (1985)CrossRefGoogle Scholar
  21. 21.
    J.R. Schrieffer, Phys. Rev., 97, 641 (1955)CrossRefGoogle Scholar
  22. 22.
    F. Stern and W.E. Howard, Phys. Rev., 163, 816 (1967)CrossRefGoogle Scholar
  23. 23.
    Y.C. Cheng, Proc. of the 2nd International Conf. on Solid Surfaces, Kyoto, Jpn. J. Appl. Phys., 2, 363 (1974)Google Scholar
  24. 24.
    S.M. Goodnick, R.G. Gann, J.R. Sites, D.K. Ferry, C.W. Wilmsen, D. Fathy, and 0.L. Krivanek, J. Vac. Sci. Technol. B, 1, 803 (1983)CrossRefGoogle Scholar
  25. 25.
    A.H. Carim and R. Sinclair, Proc. Electrochem. Soc. 86–4, 458, (1986)Google Scholar
  26. 26.
    N.M. Ravindra, J. Narayan, D. Fathy, J.K. Srivastava, and E.A. Irene, J. Mater. Res., 2, 216, (1987)CrossRefGoogle Scholar
  27. 27.
    M.S. Liang and J.Y. Choi, Appl. Phys. Lett., 50, 2, (1987)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • P. O. Hahn
    • 1
  • M. Grundner
    • 1
  • A. Schnegg
    • 1
  • H. Jacob
    • 1
  1. 1.Wacker Chemitronic GmbHResearch CenterBurghausenFRG

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