Mos Tunneling Rate and Interface State Capture Cross-Section

  • Walter E. Dahlke
  • Sanjay Jain

Abstract

Considering electron tunneling as a recombination proce s, we calculate capture cross-section, σ n, and transition rate, τ T −1 = τ o −1 exp(-2η od), for electron tunneling from an interface trap through the oxide (d ≈ 30 Å) to the metal by employing Bardeen’s matrix element on a simple one-dimensional model of the MOS structure. Calcufatgd magnitudes and dependences on trap energy of dynamic parameters, τ o −1, σ n, η o agree reasonably well with measured data. Three-dimensional effects such as band tails are discussed qualitatively.

Keywords

Band Edge Conduction Band Edge Interface Trap Tunneling Rate Trap Energy 
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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • Walter E. Dahlke
    • 1
  • Sanjay Jain
    • 2
  1. 1.Lehigh UniversityBethlehemUSA
  2. 2.AT&T Bell LaboratoriesAllentownUSA

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