Electronic and Optical Properties of Silicon Dangling-Bond Defects at the Si-Sio2 Interface

  • N. M. Johnson

Abstract

The Si-SiO2 interface possesses residual electronic defects that are characteristic of the thermal oxidation of silicon. These defects contribute bands of interfacial electronic gap states and are paramagnetic. This paper reviews the current understanding of the electronic and optical properties of these technologically-relevant defects.

Keywords

Electron Spin Resonance Gate Voltage Interface State Photothermal Deflection Spectroscopy Amphoteric Center 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • N. M. Johnson
    • 1
  1. 1.Xerox Palo Alto Research CenterPalo AltoUSA

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