Local Atomic Structure of Thermally Grown SiO2 Films

  • G. Lucovsky
  • J. T. Fitch
  • E. Kobeda
  • E. A. Irene

Abstract

We have grown thin films of SiO2 by thermal oxidation of crystalline silicon and have determined as functions of the growth and annealing conditions: (1) the frequency, v, and line-width, ∆v,of the Si-O infrared (ir) active bond-stretching absorption band; (2) the index of refraction, n, at 632.8 nm; and (3) the intrinsic in-plane film stress, σx(SiO2). Linear relationships between; (1) ∆v and v, and (2) n and v, are explained in terms of a microscopic model in which the determinant atomic scale variable is the bond-angle, 2θ, at the oxygen atom site. Using this model, we have been able to obtain an approximate value of the in-plane Young’s modulus for SiO2 from a combinatidn of stress and ir measurements.

Keywords

Oxide Film Thermal Oxide Oxide Thickness Thermally Grown Oxide Si02 Film 
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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • G. Lucovsky
    • 1
  • J. T. Fitch
    • 1
  • E. Kobeda
    • 2
  • E. A. Irene
    • 2
  1. 1.Departments of Physics and Materials Science and EngineeringNorth Carolina State UniversityRaleighUSA
  2. 2.Department of ChemistryUniversity of North Carolina at Chapel HillChapel HillUSA

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