Local Atomic Structure of Thermally Grown SiO2 Films

  • G. Lucovsky
  • J. T. Fitch
  • E. Kobeda
  • E. A. Irene
Chapter

Abstract

We have grown thin films of SiO2 by thermal oxidation of crystalline silicon and have determined as functions of the growth and annealing conditions: (1) the frequency, v, and line-width, ∆v,of the Si-O infrared (ir) active bond-stretching absorption band; (2) the index of refraction, n, at 632.8 nm; and (3) the intrinsic in-plane film stress, σx(SiO2). Linear relationships between; (1) ∆v and v, and (2) n and v, are explained in terms of a microscopic model in which the determinant atomic scale variable is the bond-angle, 2θ, at the oxygen atom site. Using this model, we have been able to obtain an approximate value of the in-plane Young’s modulus for SiO2 from a combinatidn of stress and ir measurements.

Keywords

Oxide Film Thermal Oxide Oxide Thickness Thermally Grown Oxide Si02 Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media New York 1988

Authors and Affiliations

  • G. Lucovsky
    • 1
  • J. T. Fitch
    • 1
  • E. Kobeda
    • 2
  • E. A. Irene
    • 2
  1. 1.Departments of Physics and Materials Science and EngineeringNorth Carolina State UniversityRaleighUSA
  2. 2.Department of ChemistryUniversity of North Carolina at Chapel HillChapel HillUSA

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