Diffusion and Gettering Simulations of Ion Implanted Copper in Polyimide
Recently we have observed gettering of ion-implanted copper in polyimide films. In this paper we have modeled the thermal process by incorporating the experimentally obtained dual activation energies into conventional diffusion models. The lower activation energy (small diffusant/substrate interaction) is associated with free atomic diffusion, while the larger activation energy (large diffusant/diffusant interaction) corresponds to diffusants with their movements restricted by clustering within the interaction distance of similar species. Computer simulations of the process validate the observed gettering mechanism via clustering. Experimental high temperature diffusion results are also in agreement with the simulation of the subsequent diffusion of clusters.
KeywordsInitial Cluster Rutherford Backscatter Spectroscopy Peak Region Free Atom Primary Growth
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