X-Ray Stress Studies of Aluminum Metallizations on Silicon Substrate

  • M. A. Korhonen
  • L. S. Suominen
  • Che-Yu Li

Abstract

Thin and narrow aluminum alloy metallizations represent the most important interconnects used in integrated circuit technology at the microchip level. Recently, stress induced voiding and notching of these films has become a serious reliability concern1–3. Moreover, since there is a steady trend towards larger packaging densities, the industry standard for the line width approaching now to the submicron scale, the failure risk of the interconnects, inversely proportional to the cube of the line width in case of grain boundary cavitation3, is likely to increase significantly.

Keywords

Stress Relaxation Aluminum Metallization Cross Correlation Method Triaxial Stress State Aluminum Thin Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • M. A. Korhonen
    • 1
    • 2
  • L. S. Suominen
    • 1
    • 3
  • Che-Yu Li
    • 1
  1. 1.Department of Materials Science and EngineeringCornell UniversityIthacaUSA
  2. 2.Helsinki University of TechnologyEspooFinland
  3. 3.Mexpert Instrument TechnologyEspooFinland

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