Abstract

This chapter consists of two parts. In Section 8.2 the concept of impurity band and the phenomena of impurity conduction characteristic of the impurity band are first described. Then, in connection with the analysis of impurity conduction, in particular the metal-insulator transition in doped semiconductors, the historical development of localization theory from the paper by Anderson in 1958 entitled “Absence of Diffusion in Certain Random Lattices” to the scaling theory in 1979 is surveyed.

Keywords

Donor Concentration Localization Length Impurity Band Spin Susceptibility Dope Semiconductor 
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Copyright information

© Springer Science+Business Media New York 1986

Authors and Affiliations

  • H. Kamimura
    • 1
  1. 1.Department of Physics, Faculty of ScienceUniversity of TokyoBunkyo-ku, Tokyo 113Japan

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