Crystal Growth pp 117-134 | Cite as

Trends in Crystal Growth

  • A. W. Vere
Part of the Updates in Applied Physics and Electrical Technology book series (UAPE)

Abstract

In the preceding chapters we have seen how high growth temperatures lead to high point-defect and line-defect concentrations, impurity incorporation and diffusion. The convection effects associated with high-temperature growth lead to temporal and spatial non-uniformity in growth rate, whilst the broad-waveband radiation and the high temperature of the molecular species involved give rise to a multiplicity of chemical reactions and growth mechanisms. Theoretical analysis of the growth process is difficult if not impossible. For these reasons, early theories, which assumed for simplicity that growth occurred from the adsorption of a single precursor species, was kinetically limited by mobility on the growth surface and was unaffected by the desorption of product species, were of little practical significance. Growth of good quality single-crystals remained essentially an art rather than a science.

Keywords

Multiple Quantum Well High Temperature Growth Epitaxial Lateral Overgrowth Atomic Layer Epitaxy Preceding Chapter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1987

Authors and Affiliations

  • A. W. Vere
    • 1
  1. 1.Royal Signals and Radar EstablishmentGreat MalvernEngland

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