Vapour Phase Epitaxy

  • A. W. Vere
Part of the Updates in Applied Physics and Electrical Technology book series (UAPE)

Abstract

There is considerable variety and confusion in the nomenclature of vapour phase processes which reflects the differing characteristics of the laboratories of origin. For example, in silicon processing, where the product of vapour phase reactions may be polysilicon, epitaxial silicon or amorphous oxides or nitrides, the term CVD (Chemical Vapour Deposition) is applied to all processes, irrespective of the crystalline or amorphous state of the product. Where the development of these processes has led to the introduction of metalorganic source materials the process is known as MOCVD. In laboratories concerned with single-crystal growth of a range of materials by vapour phase epitaxy (VPE) the term MOVPE is more common, emphasising the importance of the epitaxial aspects. Chemists draw an even finer distinction between OMVPE and MOVPE since the term “organometallic” refers to those compounds in which the carbon atom is directly bound to the metal atom, whereas “metalorganic” is a general term referring to any compound containing metal atoms in combination with organic radicals.

Keywords

Molecular Beam Epitaxy Vapour Phase Epitaxy Reflection High Energy Electron Diffraction Molecular Beam Epitaxy Growth Entrance Length 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© Springer Science+Business Media New York 1987

Authors and Affiliations

  • A. W. Vere
    • 1
  1. 1.Royal Signals and Radar EstablishmentGreat MalvernEngland

Personalised recommendations