Resonant Rayleigh Scattering in Epitaxially Grown ZnSe1−xSx Layers

  • M. Jütte
  • H. Stolz
  • W. von der Osten
  • J. Söllner
  • K.-P. Geyzers
  • M. Heuken
  • K. Heime
Part of the NATO ASI Series book series (NSSB, volume 330)

Abstract

In recent years the development of blue light emitting devices led to an increasing interest in ZnSe/ZnS layer systems epitaxially grown on a GaAs substrate. Most important to understand the optical processes in these materials are the excitonic states. Contrary to bulk crystals, they are affected by intrinsic biaxial strain which occurs due to lattice mismatch and different thermal expansion between layer and substrate and which reduces the crystal symmetry from T d to D 2d (for literature see e.g. ref.[1]). As a consequence, the fourfold degenerate valence band and, hence, the excitonic states are strain-split into heavy (hh) and light (lh) hole states, each twofold degenerate. In this contribution we present a study of the exciton properties by Resonant Rayleigh Scattering (RRayS). Originally introduced by Hegarty et al. 2, RRayS represents a linear coherent spectroscopic method that hitherto was rarely applied but can provide information beyond that obtained by other optical techniques3.

Keywords

GaAs Substrate Exciton State Resonance Profile Pure Dephasing Twofold Degenerate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    J. Gutowski, N. Presser, G. Kudlek, phys. stat. sol. (a) 120, 11 (1990).ADSCrossRefGoogle Scholar
  2. 2.
    J. Hegarty, M.D. Sturge, C. Weisbuch, A.C. Gossard, W. Wiegmann, Phys. Rev. Lett. 49, 930 (1982).ADSCrossRefGoogle Scholar
  3. 3.
    H. Stolz, D. Schwarze, W. von der Osten, G. Weimann, Superlatt. & Microstruct. 9, 511 (1991).ADSCrossRefGoogle Scholar
  4. H. Stolz, D. Schwarze, W. von der Osten, G. Weimann, Phys. Rev. B, 47, 9669 (1993).ADSCrossRefGoogle Scholar
  5. 4.
    M. Jütte, H. Stolz, W. von der Osten, to be published.Google Scholar

Copyright information

© Springer Science+Business Media New York 1994

Authors and Affiliations

  • M. Jütte
    • 1
  • H. Stolz
    • 1
  • W. von der Osten
    • 1
  • J. Söllner
    • 2
  • K.-P. Geyzers
    • 2
  • M. Heuken
    • 2
  • K. Heime
    • 2
  1. 1.Fachbereich PhysikUniversität-GHPaderbornGermany
  2. 2.Institut für Halbleitertechnik IRWTHAachenGermany

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