Resonance tunneling under stochastic potential perturbation

  • I. Tittonen
  • M. Kira
  • S. Stenholm
Conference paper

Abstract

Electron tunneling is studied in semiconductor heterostructures at a finite temperature. Thermal phonon excitations are supposed to lead to the time-dependent modulation of the potential structure. In addition to the thermal excitations, molecular collisions may change the conditions of the quantum system. These stochastic systems can be simulated by numerical wave packet calculations employing direct integration of the Schrödinger equation [1] or by using the propagator method [2].

Keywords

Wave Packet Barrier Height Electron Tunneling Narrow Resonance Tunneling Probability 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. [1]
    I. Tittonen, M. Kira, W. Lai and S. Stenholm, Optics Comm. 117, 439 (1995).CrossRefMATHGoogle Scholar
  2. [2]
    M. Kira, I. Tittonen, W. Lai and S. Stenholm Phys. Rev. A 51, 2526 (1995).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1996

Authors and Affiliations

  • I. Tittonen
    • 1
  • M. Kira
    • 1
  • S. Stenholm
    • 1
  1. 1.Research Institute for Theoretical PhysicsUniversity of HelsinkiFinland

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