Resonance tunneling under stochastic potential perturbation
Electron tunneling is studied in semiconductor heterostructures at a finite temperature. Thermal phonon excitations are supposed to lead to the time-dependent modulation of the potential structure. In addition to the thermal excitations, molecular collisions may change the conditions of the quantum system. These stochastic systems can be simulated by numerical wave packet calculations employing direct integration of the Schrödinger equation  or by using the propagator method .